发明授权
US09299709B2 Semiconductor device and semiconductor memory devices having first, second, and third insulating layers
有权
具有第一，第二和第三绝缘层的半导体器件和半导体存储器件
- 专利标题： Semiconductor device and semiconductor memory devices having first, second, and third insulating layers
- 专利标题（中）： 具有第一，第二和第三绝缘层的半导体器件和半导体存储器件
-
申请号： US14462766申请日： 2014-08-19
-
公开(公告)号： US09299709B2公开(公告)日： 2016-03-29
- 发明人: Takashi Sasaki
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John, P.S.
- 优先权： JP2013-184310 20130905
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L49/02
摘要：
Disclosed herein is a device that includes: a semiconductor substrate; a first insulating layer over a surface of the semiconductor substrate; first and second contact plugs each including side and upper surfaces, the side surfaces of the first and second contact plugs being surrounded by the first insulating film, the upper surfaces of the first and second contact plugs being substantially on the same plane with an upper surface of the first insulating layer; a second insulating layer over the first insulating layer; a first conductive layer including a bottom portion on the first contact plug and a side portion surrounded by the second insulating layer; a third insulating layer over the first conductive layer; and a second conductive layer on the second contact plug, apart of a side surface of the second conductive layer being surrounded by both the second and third insulating layers.
公开/授权文献
信息查询
IPC分类:
