Invention Grant
- Patent Title: Electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques
- Patent Title (中): 电极配置,以增加相变存储元件的电热隔离和相关技术
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Application No.: US14552205Application Date: 2014-11-24
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Publication No.: US09299747B1Publication Date: 2016-03-29
- Inventor: Fabio Pellizzer , Giulio Albini , Stephen W. Russell , Max F. Hineman , Sanjay Rangan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe Williamson & Wyatt PC
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L27/24 ; H01L45/00 ; H01L23/522 ; H01L23/528

Abstract:
Embodiments of the present disclosure describe electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements of the plurality of PCM elements include a phase-change material layer, a first electrode layer disposed on the phase-change material layer and in direct contact with the phase-change material layer, and a second electrode layer disposed on the first electrode layer and in direct contact with the first electrode layer. Other embodiments may be described and/or claimed.
Information query
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