Invention Grant
US09299765B2 Altering capacitance of MIM capacitor having reactive layer therein
有权
改变其中具有反应层的MIM电容器的电容
- Patent Title: Altering capacitance of MIM capacitor having reactive layer therein
- Patent Title (中): 改变其中具有反应层的MIM电容器的电容
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Application No.: US14687049Application Date: 2015-04-15
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Publication No.: US09299765B2Publication Date: 2016-03-29
- Inventor: Daniel C. Edelstein , Anthony K. Stamper
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Anthony Canale
- Main IPC: H01G5/00
- IPC: H01G5/00 ; H01L49/02 ; H01G7/02 ; H01G7/04 ; H01G7/06

Abstract:
Embodiments include a metal-insulator-metal (MIM) capacitor having: a first electrode; a second electrode disposed proximate the first electrode; an insulator layer between the first and second electrodes; and a reactive layer positioned proximate the insulator layer and configured to allow altering of the reactive layer to change a capacitive value of the MIM capacitor, the reactive layer including a reactive conductor.
Public/Granted literature
- US20150221717A1 ALTERING CAPACITANCE OF MIM CAPACITOR HAVING REACTIVE LAYER THEREIN Public/Granted day:2015-08-06
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