Invention Grant
- Patent Title: Methods for the production of integrated circuits comprising epitaxially grown replacement structures
- Patent Title (中): 包括外延生长的替代结构的集成电路的生产方法
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Application No.: US14254866Application Date: 2014-04-16
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Publication No.: US09299775B2Publication Date: 2016-03-29
- Inventor: Steven Bentley , Kejia Wang , Sylvie Mignot , Shurong Liang
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/06 ; H01L29/66 ; H01L21/762 ; H01L29/78 ; H01L21/02
Abstract:
Integrated circuits and methods for producing such integrated circuits are provided. A method for producing the integrated circuit includes forming dummy structures in a substrate, and forming shallow trench isolation regions between the dummy structures where the shallow trench isolation regions includes a liner overlying a core. The dummy structures are etched to expose structure bases, and the structure bases are precleaned. Replacement structures are epitaxially grown over the structure bases.
Public/Granted literature
- US20150303249A1 METHODS FOR THE PRODUCTION OF INTEGRATED CIRCUITS COMPRISING EPITAXIALLY GROWN REPLACEMENT STRUCTURES Public/Granted day:2015-10-22
Information query
IPC分类:
