发明授权
- 专利标题： Silicon carbide semiconductor device
- 专利标题（中）： 碳化硅半导体器件
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申请号： US14646686申请日： 2013-11-27
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公开(公告)号： US09299790B2公开(公告)日： 2016-03-29
- 发明人: Takeyoshi Masuda , Keiji Wada
- 申请人： Sumitomo Electric Industries, Ltd.
- 申请人地址： JP Osaka-shi
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JP Osaka-shi
- 代理机构： Venable LLP
- 代理商 Michael A. Sartori
- 优先权： JP2013-004632 20130115
- 国际申请： PCT/JP2013/081865 WO 20131127
- 国际公布： WO2014/112214 WO 20140724
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/16 ; H01L29/739 ; H01L29/06
摘要：
First and second ranges of a silicon carbide film have an interface. The first range includes: a first breakdown voltage holding layer having a first conductivity type; and an outer edge embedded region provided at an interface in the outer edge portion and having a second conductivity type. The second range includes a second breakdown voltage holding layer having the first conductivity type. A semiconductor element is formed in the second range. The first range includes: a central section facing the semiconductor element in the central portion in a thickness direction; and an outer edge section facing the semiconductor element in the outer edge portion in the thickness direction. At the interface, the outer edge section includes a portion having an impurity concentration different from the impurity concentration of the central section.
公开/授权文献
- US20150303267A1 SILICON CARBIDE SEMICONDUCTOR DEVICE 公开/授权日：2015-10-22
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