Invention Grant
- Patent Title: Self light-emitting device
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Application No.: US14619530Application Date: 2015-02-11
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Publication No.: US09299955B2Publication Date: 2016-03-29
- Inventor: Tetsuo Tsutsui , Toshimitsu Konuma , Mayumi Mizukami
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP11-307903 19991029
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L51/50 ; H01L27/32 ; G02F1/1335 ; H01L51/00

Abstract:
To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer (102) is sandwiched between a transparent electrode (103) and a cathode (101), a film thickness of the EL layer (102) and a film thickness of the transparent electrode (102) are equivalent to the film thicknesses in which there is no occurrence of a guided light, and an inert gas is filled in a space between the transparent electrode (103) and a cover material (105).
Public/Granted literature
- US20150162567A1 Self Light-Emitting Device Public/Granted day:2015-06-11
Information query
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