发明授权
US09301383B2 Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus
有权
低电子温度,边缘密度增强,表面波等离子体(SWP)处理方法和装置
- 专利标题: Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus
- 专利标题(中): 低电子温度,边缘密度增强,表面波等离子体(SWP)处理方法和装置
-
申请号: US13829959申请日: 2013-03-14
-
公开(公告)号: US09301383B2公开(公告)日: 2016-03-29
- 发明人: Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
- 申请人: Tokyo Electron Limited
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Wood, Herron & Evans, LLP
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/461 ; B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; H05H1/46 ; H01F41/06 ; H01L21/3065 ; H01J37/32
摘要:
A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.
公开/授权文献
信息查询
IPC分类: