发明授权
US09301383B2 Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus 有权
低电子温度,边缘密度增强,表面波等离子体(SWP)处理方法和装置

Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus
摘要:
A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.
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