Invention Grant
- Patent Title: Photomask and fabrication method thereof
- Patent Title (中): 光掩模及其制造方法
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Application No.: US14067986Application Date: 2013-10-31
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Publication No.: US09304389B2Publication Date: 2016-04-05
- Inventor: En-Chiuan Liou , Sho-Shen Lee , Wen-Liang Huang , Chang-Mao Wang , Kai-Lin Chuang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G03F1/68
- IPC: G03F1/68 ; G03F1/00
Abstract:
A photomask including first opaque patterns and second opaque patterns is provided. The first opaque patterns are distributed in a first plane defined in the photomask, while the second opaque patterns are disposed above the first opaque patterns and spaced apart from the first opaque patterns. In other words, the first opaque pattern and second opaque pattern are not distributed in the same plane.
Public/Granted literature
- US20150118602A1 PHOTOMASK AND FABRICATION METHOD THEREOF Public/Granted day:2015-04-30
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