Invention Grant
US09305616B2 Semiconductor memory cell array having fast array area and semiconductor memory including the same
有权
具有快速阵列区域的半导体存储单元阵列和包括其的半导体存储器
- Patent Title: Semiconductor memory cell array having fast array area and semiconductor memory including the same
- Patent Title (中): 具有快速阵列区域的半导体存储单元阵列和包括其的半导体存储器
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Application No.: US13943790Application Date: 2013-07-17
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Publication No.: US09305616B2Publication Date: 2016-04-05
- Inventor: Haksoo Yu , Dae-Hyun Kim , Uksong Kang , Chulwoo Park , Joosun Choi , Hyojin Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2012-0077969 20120717
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C7/10 ; G06F12/02 ; G06F12/06 ; G11C11/403 ; G11C11/406 ; G11C29/00 ; G11C29/44
Abstract:
A semiconductor memory cell array is provided which includes a first memory cell array area including first group memory cells arranged in a chip in a matrix of rows and columns and having a first operating speed; and a second memory cell array area including second group memory cells arranged in the chip in a matrix of rows and columns and having a second operating speed different from the first operating speed. The first and second memory cell array areas are accessed by addressing of a DRAM controller.
Public/Granted literature
- US20140025880A1 SEMICONDUCTOR MEMORY CELL ARRAY HAVING FAST ARRAY AREA AND SEMICONDUCTOR MEMORY INCLUDING THE SAME Public/Granted day:2014-01-23
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