Invention Grant
- Patent Title: Data storage device and flash memory control method
- Patent Title (中): 数据存储设备和闪存控制方法
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Application No.: US14317108Application Date: 2014-06-27
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Publication No.: US09305662B2Publication Date: 2016-04-05
- Inventor: Chin-Yin Tsai , Yi-Lin Lai
- Applicant: VIA TECHNOLOGIES, INC.
- Applicant Address: TW New Taipei
- Assignee: VIA TECHNOLOGIES, INC.
- Current Assignee: VIA TECHNOLOGIES, INC.
- Current Assignee Address: TW New Taipei
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW103106958A 20140303
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/08 ; G06F12/02 ; G11C16/34 ; G11C29/12 ; G06F12/14 ; G11C16/00 ; G11C29/04 ; G11C29/44

Abstract:
An identification technique for physically damaged blocks of a flash memory of a data storage device. In the data storage device, a controller coupled to the flash memory writes data into the flash memory with at least one time stamp corresponding to the data. The time stamp is taken into consideration by the controller to identify the physically damaged blocks of the flash memory, and thereby it is prevented from erroneously identifying a physically undamaged block as bad. Thus, the flash memory is prevented from being erroneously regarded as a write protected memory. The lifespan of the flash memory is effectively prolonged.
Public/Granted literature
- US20150019925A1 DATA STORAGE DEVICE AND FLASH MEMORY CONTROL METHOD Public/Granted day:2015-01-15
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