Invention Grant
- Patent Title: Semiconductor device comprising an active layer and a Schottky contact
- Patent Title (中): 半导体器件包括有源层和肖特基接触
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Application No.: US14693118Application Date: 2015-04-22
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Publication No.: US09305789B2Publication Date: 2016-04-05
- Inventor: Johannes Josephus Theodorus Marinus Donkers , Stephan Bastiaan Simon Heil , Jos aan de Stegge
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Agent Rajeev Madnawat
- Priority: EP14167589 20140508
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/285 ; H01L21/283 ; H01L29/47 ; H01L29/20
Abstract:
A semiconductor device comprising at least one active layer on a substrate and a a Schottky contact to the at least one active layer, the Schottky contact comprising a body of at least titanium and nitrogen that is electrically coupled with the at least one active layer.
Public/Granted literature
- US20150325667A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD Public/Granted day:2015-11-12
Information query
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