Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming assisting etch resistant fill topographical features that overlie a semiconductor substrate and that define an assisting etch resistant fill confinement well using a photomask. The photomask defines an assisting lithographically-printable mask feature. A block copolymer is deposited into the assisting etch resistant fill confinement well. The block copolymer is phase separated into an etchable phase and an etch resistant phase. The assisting etch resistant fill topographical features direct the etch resistant phase to form an etch resistant plug in the assisting etch resistant fill confinement well.