Invention Grant
- Patent Title: Elongated contacts using litho-freeze-litho-etch process
- Patent Title (中): 使用光刻冷冻光蚀刻工艺的细长接触
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Application No.: US14572891Application Date: 2014-12-17
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Publication No.: US09305848B2Publication Date: 2016-04-05
- Inventor: James Walter Blatchford , Scott William Jessen
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/8234 ; H01L21/762 ; H01L21/768 ; H01L21/311 ; H01L21/027
Abstract:
A process of forming an integrated circuit containing elongated contacts which connect to three active areas and/or MOS gates, and elongated contacts which connect to two active areas and/or MOS gates and directly connect to a first level interconnect, using a litho-freeze-litho-etch process for a contact etch mask. A process of forming an integrated circuit containing elongated contacts which connect to three active areas and/or MOS gates, and elongated contacts which connect to two active areas and/or MOS gates and directly connect to a first level interconnect, using a litho-freeze-litho-etch process for a first level interconnect trench etch mask. A process of forming the integrated circuit using a litho-freeze-litho-etch process for a contact etch mask and a litho-freeze-litho-etch process for a first level interconnect trench etch mask.
Public/Granted literature
- US20150170975A1 ELONGATED CONTACTS USING LITHO-FREEZE-LITHO-ETCH PROCESS Public/Granted day:2015-06-18
Information query
IPC分类:
