Invention Grant
US09305940B2 Thin film transistor having an active pattern and a source metal pattern with taper angles
有权
具有活性图案的薄膜晶体管和具有锥角的源极金属图案
- Patent Title: Thin film transistor having an active pattern and a source metal pattern with taper angles
- Patent Title (中): 具有活性图案的薄膜晶体管和具有锥角的源极金属图案
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Application No.: US14463574Application Date: 2014-08-19
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Publication No.: US09305940B2Publication Date: 2016-04-05
- Inventor: Bong-Kyun Kim , Young-Min Moon
- Applicant: Samsung Display Co., LTD.
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2013-0137548 20131113
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/04 ; H01L29/12 ; H01L21/00 ; H01L27/12 ; H01L29/45 ; H01L21/441 ; H01L21/465 ; H01L21/467 ; H01L21/768 ; H01L21/3213 ; H01L29/417 ; H01L29/786 ; H01L21/02
Abstract:
A thin film transistor includes a gate electrode, an active pattern overlapping with the gate electrode and including a semiconductive oxide, and a source metal pattern disposed on the active pattern and including a source electrode and a drain electrode spaced apart from the source electrode. The active pattern underlaps an entire portion of a lower surface of the source metal pattern and minimally protrudes beyond lateral ends of the source metal pattern due to the active pattern having sidewall taper angles that are substantially greater than corresponding and adjacent sidewall taper angles of the overlying source metal pattern. Thus parasitic capacitance may be reduced and performance enhanced.
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