Invention Grant
- Patent Title: High efficiency light emitting diode
- Patent Title (中): 高效率发光二极管
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Application No.: US14085092Application Date: 2013-11-20
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Publication No.: US09306120B2Publication Date: 2016-04-05
- Inventor: Da Hye Kim , Jong Kyun You , Chang Yeon Kim , Tae Hyuk Im
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2012-0132209 20121121
- Main IPC: H01L33/02
- IPC: H01L33/02 ; H01L33/22 ; H01L33/00 ; H01L33/20 ; H01L33/44

Abstract:
A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.
Public/Granted literature
- US20140138729A1 HIGH EFFICIENCY LIGHT EMITTING DIODE Public/Granted day:2014-05-22
Information query
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