- 专利标题： FinFET body contact and method of making same
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申请号： US14563720申请日： 2014-12-08
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公开(公告)号： US09312384B2公开(公告)日： 2016-04-12
- 发明人: Ching-Hsiung Lo , Jam-Wem Lee , Wun-Jie Lin , Jen-Chou Tseng
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78 ; H01L27/02 ; H01L29/423
摘要：
A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain region and the body contact. The semiconductor fin is on a substrate.
公开/授权文献
- US20150137264A1 FinFET Body Contact and Method of Making Same 公开/授权日：2015-05-21
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