发明授权
US09312455B2 Method for fabricating light emitting diode (LED) dice with wavelength conversion layers
有权
用波长转换层制造发光二极管(LED)晶片的方法
- 专利标题: Method for fabricating light emitting diode (LED) dice with wavelength conversion layers
- 专利标题(中): 用波长转换层制造发光二极管(LED)晶片的方法
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申请号: US14541200申请日: 2014-11-14
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公开(公告)号: US09312455B2公开(公告)日: 2016-04-12
- 发明人: Jui-Kang Yen , De-Shuo Chen
- 申请人: SemiLEDS Optoelectronics Co., Ltd., Chu-Nan Site
- 申请人地址: TW Chu-nan
- 专利权人: SemiLEDS Optoelectronics Co., Ltd.
- 当前专利权人: SemiLEDS Optoelectronics Co., Ltd.
- 当前专利权人地址: TW Chu-nan
- 代理商 Stephen A. Gratton
- 主分类号: H01L33/50
- IPC分类号: H01L33/50 ; H01L21/683
摘要:
A method for fabricating light emitting diode (LED) dice includes the step of providing a wavelength conversion layer on a substrate on an adhesive layer configured to have reduced adhesiveness upon exposure to a physical energy, such as electromagnetic radiation or heat. The method also includes the step of exposing the adhesive layer on the substrate to the physical energy to reduce the adhesiveness of the adhesive layer, removing the wavelength conversion layer from the substrate, and attaching the wavelength conversion layer to the light emitting diode (LED) die.
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