Invention Grant
US09316589B2 Method for evaluating oxide semiconductor thin film, and method for quality control of oxide semiconductor thin film
有权
氧化物半导体薄膜的评价方法以及氧化物半导体薄膜的质量控制方法
- Patent Title: Method for evaluating oxide semiconductor thin film, and method for quality control of oxide semiconductor thin film
- Patent Title (中): 氧化物半导体薄膜的评价方法以及氧化物半导体薄膜的质量控制方法
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Application No.: US14760023Application Date: 2013-09-04
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Publication No.: US09316589B2Publication Date: 2016-04-19
- Inventor: Kazushi Hayashi , Toshihiro Kugimiya , Tomoya Kishi , Aya Miki
- Applicant: Kobe Steel, Ltd.
- Applicant Address: JP Hyogo
- Assignee: Kobe Steel, Ltd.
- Current Assignee: Kobe Steel, Ltd.
- Current Assignee Address: JP Hyogo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-004708 20130115; JP2013-055795 20130318
- International Application: PCT/JP2013/073848 WO 20130904
- International Announcement: WO2014/112153 WO 20140724
- Main IPC: F21V9/16
- IPC: F21V9/16 ; G01J1/58 ; G01T1/10 ; G21H3/02 ; G21K5/00 ; H01J65/06 ; G01N21/64 ; H01L21/66 ; H01L29/24 ; H01L29/66 ; H01L29/786
Abstract:
This method for evaluating an oxide semiconductor thin film includes evaluating the stress stability of an oxide semiconductor thin film on the basis of the light emission intensity of luminescent light excited when radiating an electron beam or excitation light at a sample at which the oxide semiconductor thin film is formed. The stress stability of the oxide semiconductor thin film is evaluated on the basis of the light emission intensity (L1) observed in the range of 1.6-1.9 eV of the luminescent light excited from the oxide semiconductor thin film.
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