Invention Grant
- Patent Title: Exchange enhanced cap manufactured with argon and oxygen implantation
- Patent Title (中): 用氩气和氧气注入制造交换增强帽
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Application No.: US13720969Application Date: 2012-12-19
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Publication No.: US09318140B2Publication Date: 2016-04-19
- Inventor: Gunn Choe , Yoshihiro Ikeda
- Applicant: HGST Netherlands B.V.
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/66
- IPC: G11B5/66 ; G11B5/62 ; G11B5/84 ; G11B5/65

Abstract:
A magnetic media having a novel cap layer that allows the cap layer having improved exchange coupling and reduced thickness. The cap layer is doped with a non-reactive element such as Ar, Kr, Xe, Ne or He preferably Ar. This doping reduces increases exchange coupling and reduces the dead layer, allowing the cap layer to be made thinner for reduced magnetic spacing and improved data recording performance.
Public/Granted literature
- US20140168817A1 EXCHANGE ENHANCED CAP MANUFACTURED WITH ARGON AND OXYGEN IMPLANTATION Public/Granted day:2014-06-19
Information query
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