A memory storage device, a memory control circuit unit, and a clock adjusting circuit disposed on a plurality of layers are provided. The clock adjusting circuit includes a detection circuit, a control voltage generating circuit, and a voltage-controlled oscillator (VCO). The detection circuit detects a signal characteristic difference between an input signal and an output signal to generate a first signal. The control voltage generating circuit is coupled to the detection circuit and generates a control voltage according to the first signal. The VCO is coupled to the control voltage generating circuit and includes an inductor and a capacitor. The VCO receives the control voltage and starts oscillating according to an impedance characteristic of the inductor and the capacitor to generate the output signal. The inductor is disposed on a pad layer among the layers. Thereby, the manufacturing cost is reduced.