Invention Grant
- Patent Title: Partial page memory operations
- Patent Title (中): 部分页面存储操作
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Application No.: US13661321Application Date: 2012-10-26
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Publication No.: US09318199B2Publication Date: 2016-04-19
- Inventor: Michael Abraham , Tomoharu Tanaka , Koichi Kawai , Yuichi Einaga
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F13/28 ; G11C16/04

Abstract:
Apparatuses may include a memory block with strings of memory cells formed in a plurality of tiers. The apparatus may further comprise access lines and data lines shared by the strings, with the access lines coupled to the memory cells corresponding to a respective tier of the plurality of tiers. The memory cells corresponding to at least a portion of the respective tier may comprise a respective page of a plurality of pages. Subsets of the data lines may be mapped into a respective partial page of a plurality of partial pages of the respective page. Each partial page may be independently selectable from other partial pages. Additional apparatuses and methods are disclosed.
Public/Granted literature
- US20140122773A1 PARTIAL PAGE MEMORY OPERATIONS Public/Granted day:2014-05-01
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