Invention Grant
- Patent Title: Data storage device and flash memory control method
- Patent Title (中): 数据存储设备和闪存控制方法
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Application No.: US14317138Application Date: 2014-06-27
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Publication No.: US09318213B2Publication Date: 2016-04-19
- Inventor: Chin-Yin Tsai , Yi-Lin Lai
- Applicant: VIA TECHNOLOGIES, INC.
- Applicant Address: TW New Taipei
- Assignee: VIA TECHNOLOGIES, INC.
- Current Assignee: VIA TECHNOLOGIES, INC.
- Current Assignee Address: TW New Taipei
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW103104843A 20140214
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F13/28 ; G11C16/32 ; G11C29/02 ; G11C29/12

Abstract:
An overclocking process for a data storage device using a flash memory. A controller for the flash memory tests the flash memory using test clocks with various frequencies to determine at least one clock signal suitable to the flash memory. The clock candidates suitable to the flash memory are selected from the test clocks. The flash memory is operated in a variable-frequency manner by which the flash memory is switched between the clock candidates, such that electromagnetic interference is spread over different bands.
Public/Granted literature
- US20150016191A1 DATA STORAGE DEVICE AND FLASH MEMORY CONTROL METHOD Public/Granted day:2015-01-15
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