Invention Grant
- Patent Title: FinFET design controlling channel thickness
- Patent Title (中): FinFET设计控制通道厚度
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Application No.: US14541050Application Date: 2014-11-13
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Publication No.: US09318322B2Publication Date: 2016-04-19
- Inventor: Zhiqiang Wu , Ken-Ichi Goto , Wen-Hsing Hsieh , Jon-Hsu Ho , Chih-Ching Wang , Ching-Fang Huang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/78 ; H01L29/36 ; H01L21/02 ; H01L29/66 ; H01L29/10
Abstract:
System and method for controlling the channel thickness and preventing variations due to formation of small features. An embodiment comprises a fin raised above the substrate and a capping layer is formed over the fin. The channel carriers are repelled from the heavily doped fin and confined within the capping layer. This forms a thin-channel that allows greater electrostatic control of the gate.
Public/Granted literature
- US20150079752A1 FinFET Design Controlling Channel Thickness Public/Granted day:2015-03-19
Information query
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