CMP polishing liquid and polishing method

Invention Grant

US09318346B2 CMP polishing liquid and polishing method 有权

Title translation: CMP抛光液和抛光方法

Please log in to see more content

Patent Title: CMP polishing liquid and polishing method
Patent Title (中): CMP抛光液和抛光方法
Application No.: US14468688

Application Date: 2014-08-26
Publication No.: US09318346B2

Publication Date: 2016-04-19
Inventor: Mamiko Kanamaru , Tomokazu Shimada , Takashi Shinoda
Applicant: HITACHI CHEMICAL COMPANY., LTD.
Applicant Address: JP Tokyo
Assignee: HITACHI CHEMICAL COMPANY, LTD.
Current Assignee: HITACHI CHEMICAL COMPANY, LTD.
Current Assignee Address: JP Tokyo
Agency: Westerman, Hattori, Daniels & Adrian, LLP
Priority: JP2009-190422 20090819
Main IPC: H01L21/321
IPC: H01L21/321 ; C09G1/02 ; C09K3/14

CMP polishing liquid and polishing method

Abstract:

The CMP polishing liquid containing a medium and silica particles as an abrasive grain dispersed into the medium. The silica particles have a silanol group density of 5.0/nm2 or less and the biaxial average primary particle diameter when arbitrary 20 silica particles are selected from an image obtained by scanning electron microscope observation is 25 to 55 nm. The association degree of the silica particles is 1.1 or more. The CMP polishing liquid has the high barrier film polishing speed, the favorable abrasive grain dispersion stability, and the high interlayer dielectric polishing speed. The CMP polishing liquid can provide a method of producing semiconductor substrates or the like, that have excellent microfabrication, thin film formation, dimension accuracy, electric property and high reliability with low cost.

Abstract(Chinese):

含有介质的CMP抛光液和分散在介质中的磨粒的二氧化硅颗粒。二氧化硅粒子的硅烷醇基密度为5.0nm / nm 2以下，当通过扫描电子显微镜观察得到的图像中任意选择20个二氧化硅粒子时的双轴平均一次粒径为25〜55nm。二氧化硅粒子的结合度为1.1以上。 CMP抛光液具有高阻隔膜抛光速度，良好的磨料颗粒分散稳定性和高层间电介质抛光速度。 CMP抛光液可以提供具有优异的微细加工，薄膜形成，尺寸精度，电性能和高可靠性的低成本的半导体衬底等的制造方法。

Public/Granted literature

US20140363973A1 CMP POLISHING LIQUID AND POLISHING METHOD Public/Granted day:2014-12-11

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）
H01L21/321	.......后处理