发明授权
- 专利标题： High-k dielectric liners in shallow trench isolations
- 专利标题（中）： 浅沟槽隔离中的高k电介质衬垫
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申请号： US13198018申请日： 2011-08-04
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公开(公告)号： US09318370B2公开(公告)日： 2016-04-19
- 发明人: Szu-Ying Chen , Tzu-Jui Wang , Jen-Cheng Liu , Dun-Nian Yaung
- 申请人： Szu-Ying Chen , Tzu-Jui Wang , Jen-Cheng Liu , Dun-Nian Yaung
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L27/14
- IPC分类号： H01L27/14 ; H01L21/762 ; H01L27/146
摘要：
A circuit structure includes a semiconductor substrate having a top surface. A dielectric material extends from the top surface into the semiconductor substrate. A high-k dielectric layer is formed of a high-k dielectric material, wherein the high-k dielectric layer comprises a first portion on a sidewall of the dielectric material, and a second portion underlying the dielectric material.
公开/授权文献
- US20130032912A1 High-k Dielectric Liners in Shallow Trench Isolations 公开/授权日：2013-02-07
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