Invention Grant
US09318458B2 Bump structure having a side recess and semiconductor structure including the same
有权
具有侧凹部的凹凸结构和包括该凹部的半导体结构
- Patent Title: Bump structure having a side recess and semiconductor structure including the same
- Patent Title (中): 具有侧凹部的凹凸结构和包括该凹部的半导体结构
-
Application No.: US14800934Application Date: 2015-07-16
-
Publication No.: US09318458B2Publication Date: 2016-04-19
- Inventor: Chih-Horng Chang , Tin-Hao Kuo , Chen-Shien Chen , Yen-Liang Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L23/00
- IPC: H01L23/00
Abstract:
A bump structure includes a first end; and a second end opposite the first end. The bump structure further includes a side connected between the first end and the second end, wherein the side comprises a recess for a reflowed solder material to fill, and the recess defines a first surface adjacent to the first end and a second surface adjacent to the second end.
Public/Granted literature
- US20150318253A1 BUMP STRUCTURE HAVING A SIDE RECESS AND SEMICONDUCTOR STRUCTURE INCLUDING THE SAME Public/Granted day:2015-11-05
Information query
IPC分类:
