Invention Grant
US09318471B2 Semiconductor device and method for fabricating the same 有权
半导体装置及其制造方法

Semiconductor device and method for fabricating the same
Abstract:
A semiconductor device includes: a first substrate including a first surface layer that includes first and second electrodes; a second substrate including a second surface layer that includes third and fourth electrodes, and directly bonded to the first substrate such that the second surface layer is in contact with the first surface layer; and a functional film provided between the second and fourth electrodes. The first and third electrodes are bonded together so as to be in contact with each other, and the second electrode, the functional film, and the fourth electrode constitute a passive element.
Public/Granted literature
Information query
Patent Agency Ranking
0/0