Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14920289Application Date: 2015-10-22
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Publication No.: US09318471B2Publication Date: 2016-04-19
- Inventor: Tatsuya Kabe , Hideyuki Arai
- Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2013-104276 20130516
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L25/065 ; H01L23/00 ; H01L27/06 ; H01L23/522 ; H01L21/768 ; H01L49/02

Abstract:
A semiconductor device includes: a first substrate including a first surface layer that includes first and second electrodes; a second substrate including a second surface layer that includes third and fourth electrodes, and directly bonded to the first substrate such that the second surface layer is in contact with the first surface layer; and a functional film provided between the second and fourth electrodes. The first and third electrodes are bonded together so as to be in contact with each other, and the second electrode, the functional film, and the fourth electrode constitute a passive element.
Public/Granted literature
- US20160043060A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-02-11
Information query
IPC分类: