- 专利标题： Lithography-friendly local read circuit for NAND flash memory devices and manufacturing method thereof
-
申请号： US14699831申请日： 2015-04-29
-
公开(公告)号： US09318499B2公开(公告)日： 2016-04-19
- 发明人: Hyoung Seub Rhie
- 申请人： Conversant Intellectual Property Management Inc.
- 申请人地址： CA Ottawa
- 专利权人： Conversant Intellectual Property Management Inc.
- 当前专利权人： Conversant Intellectual Property Management Inc.
- 当前专利权人地址： CA Ottawa
- 代理商 Daniel Hammond
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; H01L27/115 ; G11C16/26 ; G11C16/10 ; G11C7/18 ; G11C16/08 ; G11C16/24 ; H01L23/528 ; H01L27/02
摘要：
A flash memory device comprising a local sensing circuitry is provided in a hierarchical structure with local and global bit lines. The local sensing circuitry comprise read and pass circuits configured to sense and amplify read currents during read operations, wherein the amplified read signals may be passed to a global circuit via the local and global bit lines.
公开/授权文献
信息查询
