Invention Grant
US09318644B2 Ion implantation and annealing for thin film crystalline solar cells
有权
薄膜晶体太阳能电池的离子注入和退火
- Patent Title: Ion implantation and annealing for thin film crystalline solar cells
- Patent Title (中): 薄膜晶体太阳能电池的离子注入和退火
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Application No.: US13483024Application Date: 2012-05-29
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Publication No.: US09318644B2Publication Date: 2016-04-19
- Inventor: Mehrdad M. Moslehi , Virendra V. Rana , Pawan Kapur
- Applicant: Mehrdad M. Moslehi , Virendra V. Rana , Pawan Kapur
- Applicant Address: US CA Milpitas
- Assignee: Solexel, Inc.
- Current Assignee: Solexel, Inc.
- Current Assignee Address: US CA Milpitas
- Agent John Wood
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L21/265 ; H01L31/0352 ; H01L31/068 ; H01L31/0224
Abstract:
A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Base regions, emitter regions, and front surface field regions are formed through ion implantation and annealing processes.
Public/Granted literature
- US20130171767A1 ION IMPLANTATION AND ANNEALING FOR HIGH EFFICIENCY BACK-CONTACT BACK-JUNCTION SOLAR CELLS Public/Granted day:2013-07-04
Information query
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