Invention Grant
- Patent Title: Acoustically-engineered multi-port piezoelectric-on-semiconductor resonators for accurate temperature sensing and reference signal generation
- Patent Title (中): 声学设计的多端口压电半导体谐振器,用于精确的温度检测和参考信号生成
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Application No.: US14015707Application Date: 2013-08-30
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Publication No.: US09318998B1Publication Date: 2016-04-19
- Inventor: Roozbeh Tabrizian , Farrokh Ayazi
- Applicant: Georgia Tech Research Corporation
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Myers Bigel & Sibley, P.A.
- Main IPC: H03B5/32
- IPC: H03B5/32 ; H01L41/09 ; H03B5/04 ; H03L1/02 ; H03B21/00 ; H03B5/30

Abstract:
An integrated circuit device includes a multi-port piezoelectric-on-semiconductor microelectromechanical resonator, which is configured to support independent and concurrent piezoelectric transduction of multiple resonance modes. The resonator includes a semiconductor resonator body (e.g., Si body) suspended opposite an underlying recess in a substrate. Opposite ends of the semiconductor resonator body are anchored to the substrate. The resonator body may be formed so that a plan layout view of a portion of the semiconductor resonator body is dumbbell-shaped to thereby support acoustic energy trapping of multiple high-Q resonance modes.
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