Invention Grant
- Patent Title: Photosensitive oligomer for photosensitive resist, method for preparing the same, and negative photosensitive resist resin composition
- Patent Title (中): 用于光敏抗蚀剂的光敏低聚物，其制备方法和负型光敏抗蚀剂树脂组合物
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Application No.: US14348489Application Date: 2013-06-03
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Publication No.: US09323151B2Publication Date: 2016-04-26
- Inventor: Wenwen Sun , Zhuo Zhang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201310072295 20130307
- International Application: PCT/CN2013/076670 WO 20130603
- International Announcement: WO2014/134881 WO 20140912
- Main IPC: C08F8/14
- IPC: C08F8/14 ; G03F7/038 ; C08F220/06 ; C08F220/10 ; C08F8/42 ; G03F7/004 ; G02B5/23 ; G02B1/00
Abstract:
A photosensitive oligomer for photosensitive resist comprising unsaturated double-bond group and flexible group. The monomers or compounds for synthesizing the photosensitive oligomer include unsaturated double-bond containing organic acid-based monomers, unsaturated double-bond containing organic ester-based monomers, unsaturated double-bond containing organic acid chloride/ethylene-based monomers, unsaturated double-bond containing alcohol-based compounds, and flexible group-containing silane/ether-based compounds. The present invention further provides a negative photosensitive resist resin composition comprising the photosensitive oligomer.
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