According to an embodiment, there is provided a method of fabricating an epitaxial wafer, which includes preparing a wafer in a susceptor; and growing an epitaxial layer on the wafer, wherein the growing of the epitaxial layer on the wafer includes supplying a raw material into the susceptor; growing the epitaxial layer on the wafer at a first growth rate; and growing the epitaxial layer on the wafer at a second growth rate higher than the first growth rate. According to an embodiment, there is provided a silicon carbide epitaxial wafer which includes a silicon carbide wafer; and a silicon carbide epitaxial layer on the silicon carbide wafer wherein a surface defect formed on the silicon carbide epitaxial layer is 1 ea/cm2 or less.