发明授权
- 专利标题： Method of forming a semiconductor device
- 专利标题（中）： 形成半导体器件的方法
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申请号： US14468613申请日： 2014-08-26
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公开(公告)号： US09324568B2公开(公告)日： 2016-04-26
- 发明人: Masaki Nagata
- 申请人： ROHM CO., LTD.
- 申请人地址： JP Kyoto
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2011-22987 20110204
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L29/417 ; H01L29/45 ; H01L29/66 ; H01L29/78 ; H01L29/08 ; H01L21/265 ; H01L29/16 ; H01L29/423
摘要：
A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 Å or smaller. The interface between the source electrode and the source region is silicidized.
公开/授权文献
- US20140363939A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE 公开/授权日：2014-12-11
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