发明授权
US09324652B2 Method of creating a maskless air gap in back end interconnections with double self-aligned vias 有权
在具有双自对准通孔的后端互连中产生无掩蔽气隙的方法

Method of creating a maskless air gap in back end interconnections with double self-aligned vias
摘要:
A method including patterning a thickness dimension of an interconnect material into a thickness dimension for a wiring line with one or more vias extending from the wiring line and introducing a dielectric material on the interconnect material. A method including depositing and patterning an interconnect material into a wiring line and one or more vias; and introducing a dielectric material on the interconnect material such that the one or more vias are exposed through the dielectric material. An apparatus including a first interconnect layer in a first plane and a second interconnect in a second plane on a substrate; and a dielectric layer separating the first and second interconnect layers, wherein the first interconnect layer comprises a monolith including a wiring line and at least one via, the at least one via extending from the wiring line to a wiring line of the second interconnect layer.
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