Invention Grant
- Patent Title: Integrated circuit and related manufacturing method
- Patent Title (中): 集成电路及相关制造方法
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Application No.: US14581671Application Date: 2014-12-23
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Publication No.: US09324712B2Publication Date: 2016-04-26
- Inventor: Yi Hua Shen , Yun Chu Yu , Hao Zhong
- Applicant: Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN CN
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN CN
- Agency: Innovation Counsel LLP
- Priority: CN201410163001 20140422
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L27/088 ; H01L21/66 ; H01L21/8234 ; H01L27/02
Abstract:
A method for manufacturing an integrated circuit may include the following steps: forming a first transistor, which includes a first active region; forming a second transistor, which includes a second active region; forming a third transistor, which includes a gate electrode that overlaps each of the first active region and the second active region; and providing a predetermined voltage to the gate electrode for turning off the third transistor to isolate the first transistor from the second transistor.
Public/Granted literature
- US20150303193A1 INTEGRATED CIRCUIT AND RELATED MANUFACTURING METHOD Public/Granted day:2015-10-22
Information query
IPC分类:
