Invention Grant
- Patent Title: Integrated circuit devices and fabricating method thereof
- Patent Title (中): 集成电路器件及其制造方法
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Application No.: US14162052Application Date: 2014-01-23
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Publication No.: US09324850B2Publication Date: 2016-04-26
- Inventor: Myung-Gil Kang , Sung-Bong Kim , Chang-Woo Oh , Dong-Won Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0020612 20130226
- Main IPC: H01L29/775
- IPC: H01L29/775 ; H01L27/088 ; H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L21/84 ; H01L27/12
Abstract:
An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.
Public/Granted literature
- US20140239255A1 INTEGRATED CIRCUIT DEVICES AND FABRICATING METHOD THEREOF Public/Granted day:2014-08-28
Information query
IPC分类:
