The present disclosure provides, in various aspects, a method of forming a semiconductor device and accordingly formed semiconductor devices. In accordance with some illustrative embodiments herein, a fin is provided in an upper surface of a substrate, the fin having a height dimension and an initial width dimension. After forming a mask on the fin, wherein the mask only partially covers an upper surface of the fin, the fin is exposed to an etch process for removing material in accordance with the mask such that a channel portion connecting end portions of the fin is formed. Herein, a width dimension of the channel portion is smaller than a width dimension of the end portions. In accordance with some illustrative embodiments of the present disclosure, the channel portion may substantially have a cross-section of one of a triangular shape and a double-sigma shape.