Invention Grant
- Patent Title: Nitride semiconductor structure, multilayer structure, and nitride semiconductor light-emitting element
- Patent Title (中): 氮化物半导体结构，多层结构和氮化物半导体发光元件
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Application No.: US14293441Application Date: 2014-06-02
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Publication No.: US09324913B2Publication Date: 2016-04-26
- Inventor: Songbaek Choe , Shunji Yoshida , Toshiya Yokogawa
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: JP2012-223035 20121005
- Main IPC: H01L33/32
- IPC: H01L33/32 ; C30B25/04 ; C30B29/40 ; C30B29/36 ; H01L21/02 ; H01L33/06 ; C30B25/18 ; C30B29/68 ; H01L33/00 ; H01L33/16 ; H01L33/02 ; H01S5/343
Abstract:
A nitride semiconductor structure includes: a plurality of crystal growth seed regions formed of a nitride semiconductor, of which the principal surface is an m-plane and which extends to a range that defines an angle of not less than 0 degrees and not more than 10 degrees with respect to an a-axis; and a laterally grown region formed of a nitride semiconductor which has extended in a c-axis direction from each of the plurality of crystal growth seed regions. An S width that is the spacing between adjacent ones of the plurality of crystal growth seed regions is at least 20 μm.
Public/Granted literature
- US20140269801A1 NITRIDE SEMICONDUCTOR STRUCTURE, MULTILAYER STRUCTURE, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT Public/Granted day:2014-09-18
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