Invention Grant
- Patent Title: Ytterbium sputtering target and method of producing said target
- Patent Title (中): 镱溅射靶及其制造方法
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Application No.: US12594492Application Date: 2009-02-05
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Publication No.: US09328411B2Publication Date: 2016-05-03
- Inventor: Shiro Tsukamoto
- Applicant: Shiro Tsukamoto
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2008-028631 20080208
- International Application: PCT/JP2009/051931 WO 20090205
- International Announcement: WO2009/099121 WO 20090813
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C22F1/00 ; C22F1/02 ; C22F1/16

Abstract:
Provided is a method of producing an ytterbium sputtering target, wherein an ytterbium target material having Vickers hardness (Hv) of the material surface of 15 or more and 40 or less is prepared in advance, and a surface of the ytterbium target material having the foregoing surface hardness is subject to final finish processing by way of machining. With the ytterbium sputtering target, present invention aims to remarkably reduce the irregularities (gouges) on the target surface after the final finish processing of the target material, and to inhibit the generation of particles during sputtering.
Public/Granted literature
- US20100044223A1 Ytterbium Sputtering Target and Method of Producing said Target Public/Granted day:2010-02-25
Information query
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