Invention Grant
- Patent Title: Edge termination by ion implantation in gallium nitride
- Patent Title (中): 通过离子注入在氮化镓中的边缘终止
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Application No.: US14558393Application Date: 2014-12-02
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Publication No.: US09330918B2Publication Date: 2016-05-03
- Inventor: Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Linda Romano , David P. Bour , Richard J. Brown , Thomas R. Prunty
- Applicant: Avogy, Inc.
- Applicant Address: US CA San Jose
- Assignee: Avogy, Inc.
- Current Assignee: Avogy, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L29/66 ; H01L29/808 ; H01L29/868 ; H01L29/872 ; H01L29/06 ; H01L29/20
Abstract:
A method of making an edge terminated semiconductor device includes providing a GaN substrate having a GaN epitaxial layer grown thereon and exposing a portion of the GaN epitaxial layer to ion implantation. The energy dose is selected to provide a resistivity that is at least 90% of maximum achievable resistivity. The method also includes depositing a conductive layer over a portion of the implanted region.
Public/Granted literature
- US20150200097A1 EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE Public/Granted day:2015-07-16
Information query
IPC分类:
