Invention Grant
US09331067B2 BigFET ESD protection that is robust against the first peak of a system-level pulse
有权
对于系统级脉冲的第一个峰值，BigFET ESD保护是强大的
- Patent Title: BigFET ESD protection that is robust against the first peak of a system-level pulse
- Patent Title (中): 对于系统级脉冲的第一个峰值，BigFET ESD保护是强大的
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Application No.: US14025689Application Date: 2013-09-12
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Publication No.: US09331067B2Publication Date: 2016-05-03
- Inventor: Gijs de Raad
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Agent Rajeev Madnawat
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/78
Abstract:
Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device includes a bigFET configured to conduct an ESD pulse during an ESD event. The bigFET includes a backgate terminal, a source terminal, and a current distributor connected to the backgate terminal and the source terminal and configured to homogeneously activate a parasitic bipolar junction transistor of the bigFET in response to a current that is generated in the bigFET during the ESD pulse. Other embodiments are also described.
Public/Granted literature
- US20150070804A1 BIGFET ESD PROTECTION THAT IS ROBUST AGAINST THE FIRST PEAK OF A SYSTEM-LEVEL PULSE Public/Granted day:2015-03-12
Information query
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