Invention Grant
US09331165B2 Thin-film transistor (TFT), manufacturing method thereof, array substrate, display device and barrier layer
有权
薄膜晶体管(TFT),其制造方法,阵列基板,显示装置和阻挡层
- Patent Title: Thin-film transistor (TFT), manufacturing method thereof, array substrate, display device and barrier layer
- Patent Title (中): 薄膜晶体管(TFT),其制造方法,阵列基板,显示装置和阻挡层
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Application No.: US14127858Application Date: 2013-10-30
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Publication No.: US09331165B2Publication Date: 2016-05-03
- Inventor: Xiang Liu , Gang Wang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201210434914 20121102; CN201220575529U 20121102
- International Application: PCT/CN2013/086250 WO 20131030
- International Announcement: WO2014/067463 WO 20140508
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/49 ; H01L29/45 ; H01L29/786 ; H01L27/12 ; H01L29/66

Abstract:
The present invention discloses a thin-film transistor (TFT), a manufacturing method thereof, an array substrate and a display device. The present invention is used for improving the electrical properties of the TFT and the image quality of the display device. The TFT provided by the present invention comprises: a gate electrode, a source electrode, a drain electrode, a semiconductor layer, a gate electrode insulating layer and a first metal barrier layer, which are disposed on a substrate; the gate electrode insulating layer is disposed between the gate electrode and the semiconductor layer; and the first metal barrier layer is disposed between the source/drain electrodes and the gate electrode insulating layer, and the first metal barrier layer is arranged on the same layer as the semiconductor layer and configured to prevent interdiffusion between the material for forming the source/drain electrodes and the material for forming the gate electrode.
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