Invention Grant
- Patent Title: Heterojunction III-V solar cell performance
- Patent Title (中): 异质结III-V太阳能电池性能
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Application No.: US14147939Application Date: 2014-01-06
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Publication No.: US09331229B2Publication Date: 2016-05-03
- Inventor: Stephen W. Bedell , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts, Mlotkowski, Safran & Cole PC
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00 ; H01L31/075 ; H01L31/0304 ; H01L31/074
Abstract:
An InxGa1-xAs interlayer is provided between a III-V base and an intrinsic amorphous semiconductor layer of a heterojunction III-V solar cell structure. Improved surface passivation and open circuit voltage may be obtained through the incorporation of the interlayer within the structure.
Public/Granted literature
- US20140190564A1 HETEROJUNCTION III-V SOLAR CELL PERFORMANCE Public/Granted day:2014-07-10
Information query
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