A non-volatile reconfigurable logic device executing logical operations and a memory function and controlled by a magnetic field is provided. The reconfigurable logic device includes i) at least one semiconductor device; and ii) a pair of magnetic field controlled devices respectively spaced apart from both sides of the semiconductor device and that are adapted to generate magnetic field leakage to control the semiconductor device. The semiconductor device includes i) a first semiconductor layer; and ii) a second semiconductor layer located on the first semiconductor layer. One of the first semiconductor layer and the second semiconductor layer is a p-type semiconductor layer and the other is an n-type semiconductor layer.