Invention Grant
- Patent Title: Forming memristors on imaging devices
- Patent Title (中): 在成像设备上形成忆阻器
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Application No.: US14169375Application Date: 2014-01-31
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Publication No.: US09331278B2Publication Date: 2016-05-03
- Inventor: Jianhua Yang , Ning Ge , Zhiyong Li , Minxian Max Zhang
- Applicant: Hewlett-Packard Development Company, L.P.
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L45/00 ; B41J2/16 ; H01L27/24 ; B41J2/14
Abstract:
Forming memristors on imaging devices can include forming a printhead body comprising a first conductive material, forming a memory on the printhead body by performing an oxidation process to form a switching oxide material on the first conductive material, and forming a second conductive material on the switching oxide material.
Public/Granted literature
- US20150114927A1 FORMING MEMRISTORS ON IMAGING DEVICES Public/Granted day:2015-04-30
Information query
IPC分类:
