Invention Grant
- Patent Title: Over-voltage protection circuit for a drive transistor
- Patent Title (中): 用于驱动晶体管的过电压保护电路
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Application No.: US14509427Application Date: 2014-10-08
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Publication No.: US09331474B1Publication Date: 2016-05-03
- Inventor: Ranajay Mallik , Luigi Abbatelli , Giuseppe Catalisano , Akshat Jain
- Applicant: STMicroelectronics International N.V. , STMicroelectronics S.r.l.
- Applicant Address: NL Amsterdam IT Agrate Brianza
- Assignee: STMICROELECTRONICS INTERNATIONAL N.V.,STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS INTERNATIONAL N.V.,STMICROELECTRONICS S.R.L.
- Current Assignee Address: NL Amsterdam IT Agrate Brianza
- Agency: Gardere Wynne Sewell LLP
- Main IPC: H02H3/20
- IPC: H02H3/20 ; H02H9/04 ; H02H7/20 ; H02H1/00

Abstract:
A drive transistor is connected to a resonant load in a low-side drive configuration. The voltage across the conduction terminals of the drive transistor is sensed and compared to an over-voltage threshold. An over-voltage signal is asserted in response to the comparison. The drive transistor is controlled by a PWM control signal in normal mode. In response to the assertion of the over-voltage signal, the drive transistor is forced to turn on (irrespective of the PWM control signal) to relieve the over-voltage condition. Operation of the circuit may be disabled or forced into soft start mode in response to the assertion of the over-voltage signal. Additionally, the pulse width of the PWM control signal may be reduced in response to the assertion of the over-voltage signal.
Public/Granted literature
- US20160105017A1 OVER-VOLTAGE PROTECTION CIRCUIT FOR A DRIVE TRANSISTOR Public/Granted day:2016-04-14
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