Invention Grant
- Patent Title: Fabrication method of semiconductor package
- Patent Title (中): 半导体封装的制造方法
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Application No.: US14151153Application Date: 2014-01-09
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Publication No.: US09337061B2Publication Date: 2016-05-10
- Inventor: Yan-Heng Chen , Chun-Tang Lin , Mu-Hsuan Chan , Chieh-Yuan Chi , Yan-Yi Liao
- Applicant: Siliconware Precision Industries Co., Ltd
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW102117714A 20130520
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/52 ; H01L21/78 ; H01L23/00 ; H01L21/56
Abstract:
A fabrication method of a semiconductor package is disclosed, which includes the steps of: providing a carrier; disposing at least a semiconductor element on the carrier; forming an encapsulant on the carrier and the semiconductor element for encapsulating the semiconductor element; removing the carrier; disposing a pressure member on the encapsulant; and forming an RDL structure on the semiconductor element and the encapsulant, thereby suppressing internal stresses through the pressure member so as to mitigate warpage on edges of the encapsulant.
Public/Granted literature
- US20140342505A1 FABRICATION METHOD OF SEMICONDUCTOR PACKAGE Public/Granted day:2014-11-20
Information query
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