- 专利标题: Multi-component integrated circuit contacts
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申请号: US13613047申请日: 2012-09-13
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公开(公告)号: US09337162B2公开(公告)日: 2016-05-10
- 发明人: William M. Hiatt , Warren M. Farnworth
- 申请人: William M. Hiatt , Warren M. Farnworth
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Schwegman Lundberg & Woessner, P.A.
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L23/31
摘要:
An integrated circuit connection is describe that includes a first, securing member and a second, connection member. The first member, in an embodiment, is a spike that has a portion of its body fixed in a layer of an integrated circuit structure and extends outwardly from the integrated circuit structure. The second material is adapted to form a mechanical connection to a further electrical device. The second material (e.g., solder), is held by the first member to the integrated circuit structure. The first member increases the strength of the connection and assists in controlling the collapse of second member to form the mechanical connection to another circuit. The connection is formed by coating the integrated circuit structure with a patterned resist and etching the layer beneath the resist. A first member material (e.g., metal) is deposited. The resist is removed. The collapsible material is fixed to the first member.
公开/授权文献
- US20130001780A1 MULTI-COMPONENT INTEGRATED CIRCUIT CONTACTS 公开/授权日:2013-01-03
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