Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14089356Application Date: 2013-11-25
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Publication No.: US09337199B2Publication Date: 2016-05-10
- Inventor: Jiyoung Kim , Sungho Jang , Kang-Uk Kim , Kyung-Eun Kim , Daeik Kim , Hyoungsub Kim , Nakjin Son , Dong Jin Lee , Yoosang Hwang , Jihye Hwang
- Applicant: Jiyoung Kim , Sungho Jang , Kang-Uk Kim , Kyung-Eun Kim , Daeik Kim , Hyoungsub Kim , Nakjin Son , Dong Jin Lee , Yoosang Hwang , Jihye Hwang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2013-0049510 20130502
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L27/088

Abstract:
A semiconductor device may include a substrate having a first region and a second region on a surface thereof, and a first semiconductor fin on the first region of the substrate with the first semiconductor fin including a first trench therethrough. A first gate electrode may be provided in the first trench, and first and second source/drain regions may be provided in the first semiconductor fin, with the first gate electrode between the first and second source/drain regions. A second semiconductor fin may be provided on the second region of the substrate with the second semiconductor fin including a second trench therethrough, a second gate electrode may be provided in the second trench, and third and fourth source/drain regions may be provided in the second semiconductor fin with the second gate electrode being between the third and fourth source/drain regions.
Public/Granted literature
- US20140327087A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-11-06
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