Invention Grant
- Patent Title: Power amplifier with improved low bias mode linearity
- Patent Title (中): 功率放大器具有改进的低偏置模式线性度
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Application No.: US14304149Application Date: 2014-06-13
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Publication No.: US09337787B2Publication Date: 2016-05-10
- Inventor: Derek Schooley , Alexander Wayne Hietala
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H03G3/30
- IPC: H03G3/30 ; H03F3/21 ; H03F1/02 ; H03F3/191
Abstract:
Power amplifier circuitry includes a power amplifier including an input node and an output node, biasing circuitry, a selectable impedance network, and an input capacitor. The input capacitor is coupled to the input node of the power amplifier. The biasing circuitry is coupled to the input node of the power amplifier through the selectable impedance network. The power amplifier is operable in a low power operating mode and a high power operating mode. In the low power operating mode, the biasing circuitry delivers a first biasing current to the input node of the power amplifier, and a first impedance level of the selectable impedance is selected. In the high power operating mode, the biasing circuitry delivers a second biasing current to the input node of the power amplifier, and a second impedance level of the selectable impedance is selected.
Public/Granted literature
- US20140375390A1 POWER AMPLIFIER WITH IMPROVED LOW BIAS MODE LINEARITY Public/Granted day:2014-12-25
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